Datasheet4U Logo Datasheet4U.com

HVV0405-175

Power Transistor

HVV0405-175 Features

* Silicon MOSFET Technology

* Operation from 24V to 50V

* High Power Gain

* Extreme Ruggedness

* Internal Input Matching

* Excellent Thermal Stability

* All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology is well suit

HVV0405-175 General Description

The high power HVV0405-175 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the UHF-Band from 420MHz to 480MHz. The high voltage HVVFET™ technology produces over 175W of pulsed output power while offering high gain,high efficiency,and ease of matching with.

HVV0405-175 Datasheet (729.48 KB)

Preview of HVV0405-175 PDF

Datasheet Details

Part number:

HVV0405-175

Manufacturer:

HVVi

File Size:

729.48 KB

Description:

Power transistor.
The innovative Semiconductor Company! HVV0405-175 High Voltage, High Ruggedness TM UHF Pulsed Power Transistor 400-500 MHz, 300μs Pulse, 10% Duty Cycl.

📁 Related Datasheet

HVV0912-150 Power Transistor (HVVi)

HVV1011-035 RF transistor (ASI)

HVV1011-035 Power Transistor (HVVi)

HVV1011-300 Power Transistor (HVVi)

HVV1012-060 RF transistor (ASI)

HVV1012-060 Power Transistor (HVVi)

HVV1012-100 Power Transistor (HVVi)

HVV1012-250 Power Transistor (HVVi)

HVV1214-025 Power Transistor (HVVi)

HVV1214-025 RF transistor (ASI)

TAGS

HVV0405-175 Power Transistor HVVi

Image Gallery

HVV0405-175 Datasheet Preview Page 2 HVV0405-175 Datasheet Preview Page 3

HVV0405-175 Distributor