HVV0405-175 Datasheet - HVVi

HVV0405-175 Power Transistor

The high power HVV0405-175 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the UHF-Band from 420MHz to 480MHz. The high voltage HVVFET™ technology produces over 175W of pulsed output power while offering high gain,high efficiency,and ease of matching with.

HVV0405-175 Features

* Silicon MOSFET Technology

* Operation from 24V to 50V

* High Power Gain

* Extreme Ruggedness

* Internal Input Matching

* Excellent Thermal Stability

* All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology is well suit

HVV0405-175 Datasheet (729.48 KB)

HVV0405-175 Datasheet Preview — Preview of HVV0405-175 PDF

Datasheet Details

Part number:

HVV0405-175

Manufacturer:

HVVi

File Size:

729.48 KB

Description:

Power transistor.

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HVV0405-175 Power Transistor HVVi

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