HVV0405-175 Datasheet (HVVi) - Power Transistor

HVV0405-175, Power Transistor

The high power HVV0405-175 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the UHF-Band from 420MHz to 480MHz.

The high voltage HVVFET™ technology produces over 175W of pulsed output power while offering high gain,high efficiency,and ease of matching with

HVV0405-175 Features

* Silicon MOSFET Technology

* Operation from 24V to 50V

* High Power Gain

* Extreme Ruggedness

* Internal Input Matching

* Excellent Thermal Stability

* All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology is well suit