HVV0912-150

Power Transistor

HVV0912-150 Features

* Silicon MOSFET Technology

* Operation from 24V to 50V

* High Power Gain

* Extreme Ruggedness

* Internal Input and Output Matching

* Excellent Thermal Stability

* All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology i

HVV0912-150 General Description

The high power HVV0912-150 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 960MHz to 1215MHz. The high voltage HVVFET™ technology produces over 150W of pulsed output power while offering high gain,high efficiency,and ease of matching with .

HVV0912-150 Datasheet (761.42 KB)

HVV0912-150 Datasheet Preview — Preview of HVV0912-150 PDF

Datasheet Details

Part number:

HVV0912-150

Manufacturer:

HVVi

File Size:

761.42 KB

Description:

Power transistor.
The innovative Semiconductor Company! HVV0912-150 High Voltage, High Ruggedness TM L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10μs Pulse, 1.

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HVV0912-150 Power Transistor HVVi

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HVV0912-150 Features

HVV0912-150 General Description

Datasheet Details

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Description:

HVV0912-150 Distributor