HVV1214-025
HVVi
613.77kb
Power transistor.
TAGS
📁 Related Datasheet
HVV1214-025 - RF transistor
(ASI)
>LL'('*#&(+
25 Watts, 50V, 1200-1400MHz
200 s, 10% Duty
DESCRIPTION
The high power HVV1214-025 device is a high voltage silicon enhancement mode RF .
HVV1214-025S - RF Transistor
(HVVi)
HVV1214-025
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty
The innovative Semiconductor Company
DESCRIPTION
The high po.
HVV1214-075 - RF Transistor
(HVVi)
TheTihnenTTiohhnveenaitioinnvvnanetoiovSvvaeeatitmiiSvvceeeomSinSecdeoumimcnitcdcoouroncntdCdouoruccmttCpooorarnmCyCp ooamnmypp aannyy Preliminary
H.
HVV1214-100 - Power Transistor
(HVVi)
The innovative Semiconductor Company
HVV1214-100 High Voltage, High Ruggedness
TM L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10.
HVV1011-035 - RF transistor
(ASI)
DESCRIPTION
The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operati.
HVV1011-035 - Power Transistor
(HVVi)
HVV1011-040
ThePinnovativereSTehmiTecihToenThninehdnoieuvnnicaontntvioonvarvoteiavCtviaSoetvieemvSmpeieSaceSmnoiemycni mocdionucndcotdunocurdtcutoCrc.
HVV1011-300 - Power Transistor
(HVVi)
The innovative Semiconductor Company
HVV1011-300 High Voltage, High Ruggedness
TM L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, .
HVV1012-060 - RF transistor
(ASI)
DESCRIPTION
GPAECKAGE
FEATURES ABSOLUTE MAXIMUM RATINGS
RUGGEDNESS
THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS
7525 ETHEL AVENUE NORTH HOL.
HVV1012-060 - Power Transistor
(HVVi)
ThTeThiheTTneihhnineeonniivnoannvtoinnavvtooiaetvvviaaeSvttiieeSvvmeSeeiecmSSiomeecinocmmdiinouccdncootudonncurtddcotuuCroccottrCoomorrCpomaCCpnmooayp.
HVV1012-100 - Power Transistor
(HVVi)
ThTehieTnihnneonivoanvtinavtoievvaeStieSvmeeicmSioecnomdinucdcotuoncrtdouCrcotComorpmaCpnoay nmyp any Preliminary
HVV1012-100 HVVL10-B1a2n-1d0A0vioni.