HVV1214-100

Power Transistor

HVV1214-100 Features

* Silicon MOSFET Technology

* Operation from 24V to 50V

* High Power Gain

* Extreme Ruggedness

* Internal Input and Output Matching

* Excellent Thermal Stability

* All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology i

HVV1214-100 General Description

The high power HVV1214-100 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1200MHz to 1400MHz. The high voltage HVVFET™ technology produces over 100W of pulsed output power while offering high gain,high efficiency,and ease of matching with.

HVV1214-100 Datasheet (726.92 KB)

HVV1214-100 Datasheet Preview — Preview of HVV1214-100 PDF

Datasheet Details

Part number:

HVV1214-100

Manufacturer:

HVVi

File Size:

726.92 KB

Description:

Power transistor.
The innovative Semiconductor Company! HVV1214-100 High Voltage, High Ruggedness TM L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10.

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HVV1214-100 Power Transistor HVVi

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HVV1214-100 Features

HVV1214-100 General Description

Datasheet Details

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Description:

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