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IRF541

N-Channel Power MOSFETs

IRF541 Features

* 25A and 28A, 80V and 100V

* rDS(ON) = 0.077Ω and 0.100Ω

* Single Pulse Avalanche Energy Rated

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for Soldering Surfac

IRF541 General Description

These are N-Channel enhancement mode silicon gate power field eff ect tr ansistors. The y are adv anced po wer MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo wn avalanche mode of operation. All of these po wer MOSFETs are designed f or applications suc.

IRF541 Datasheet (142.43 KB)

Preview of IRF541 PDF

Datasheet Details

Part number:

IRF541

Manufacturer:

Harris

File Size:

142.43 KB

Description:

N-channel power mosfets.

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TAGS

IRF541 N-Channel Power MOSFETs Harris

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