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IRF541, IRF540 N-Channel Power MOSFET

IRF541 Description

Semiconductor IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power field eff ect tr ansistors.

IRF541 Features

* 25A and 28A, 80V and 100V
* rDS(ON) = 0.077Ω and 0.100Ω
* Single Pulse Avalanche Energy Rated
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for Soldering Surfac

IRF541 Applications

* such as s witching regulators, switching convertors, motor dr ivers, relay drivers, and dr ivers for high po wer bipolar s witching tr ansistors requir ing high speed and lo w gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17421. Novem

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This datasheet PDF includes multiple part numbers: IRF541, IRF540. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRF541, IRF540
Manufacturer
Harris
File Size
142.43 KB
Datasheet
IRF540-Harris.pdf
Description
N-Channel Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IRF541, IRF540.
Please refer to the document for exact specifications by model.

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N-Channel Power MOSFET Harris
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