RF1S540 Datasheet (Harris) - N-Channel Power MOSFETs

RF1S540, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power ﬁeld eff ect tr ansistors.

The y are adv anced po wer MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdo wn avalanche mode of operation.

All of these po wer MOSFETs are designed f or applications suc

RF1S540 Features

* 25A and 28A, 80V and 100V

* rDS(ON) = 0.077Ω and 0.100Ω

* Single Pulse Avalanche Energy Rated

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for Soldering Surfac