RF1S540 - N-Channel Power MOSFETs

Harris

Datasheet Details

These are N-Channel enhancement mode silicon gate power ﬁeld eff ect tr ansistors.

25A and 28A, 80V and 100V.
rDS(ON) = 0.077Ω and 0.100Ω.
Single Pulse Avalanche Energy Rated.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF540 IRF541 IRF542 IRF543 RF1S540 RF1S540SM.

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Published: May 26, 2014 |