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RF1S70N06 N-Channel Enhancement-Mode Power MOSFETs

RF1S70N06 Description

SEMICONDUCTOR RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM December 1995 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs .
The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM are N-channel power MOSFETs manufactured using the MegaFET process.

RF1S70N06 Features

* 70A, 60V
* rDS(on) = 0.014Ω
* Temperature Compensated PSPICE Model
* Peak Current vs Pulse Width Curve
* UIS Rating Curve (Single Pulse)
* +175oC Operating Temperature Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYLE TO-247 SOURCE DRAIN GATE Descrip

RF1S70N06 Applications

* such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. PACKAGE AVAILABILITY PART NUMBER PACKAGE BRAND RFG70N06 TO-247 RFG70N06 RFP70N06 TO-220AB RFP70N06 RF1S70N06 TO-262AA F1S70N06 RF1S7

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Datasheet Details

Part number
RF1S70N06
Manufacturer
Harris
File Size
65.85 KB
Datasheet
RF1S70N06-Harris.pdf
Description
N-Channel Enhancement-Mode Power MOSFETs

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N-Channel Enhancement-Mode Power MOSFETs Harris
Harris RF1S70N06-like datasheet