RF1S50N06SM, RF1S50N06 Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

Harris

Description

SEMICONDUCTOR RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM December 1995 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs .
Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYLE TO-247 SOURCE DRAIN GATE The RFG50N06, RFP50N06, RF1S50N06, and RF1S50N06SM N-Channel power MOSFETs.

📥 Download Datasheet

RF1S50N06SM Datasheet Preview — This datasheet PDF includes multiple part numbers: RF1S50N06SM, RF1S50N06. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: RF1S50N06SM, RF1S50N06
Manufacturer: Harris
File Size: 77.46 KB
Datasheet: RF1S50N06-Harris.pdf
Description: Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
Note: This datasheet PDF includes multiple part numbers: RF1S50N06SM, RF1S50N06.
Please refer to the document for exact specifications by model.

Features

* 50A, 60V
* rDS(ON) = 0.022Ω
* Temperature Compensating PSPICE Model
* Peak Current vs Pulse Width Curve
* UIS Rating Curve

Applications

* such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. PACKAGE AVAILABILITY DRAIN (FLANGE) JEDEC TO-220AB SOURCE DRAIN GATE PART NUMBER PACKAGE BRAND RFG50N06 TO-247 RFG50N06 RFP50N06 TO-22

RF1S50N06SM Distributors

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RF1S50N06 Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Harris

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