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HBC548 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HBC548, a member of the HBC548_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Description

The HBC548 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.

Maximum Temperatures Storage Temperature -55 to +150 °C Junction Temperature +150 °C Maximum Power Dissipation

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Datasheet Details

Part number HBC548
Manufacturer Hi-Sincerity Mocroelectronics
File Size 45.87 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBC548 Datasheet
Additional preview pages of the HBC548 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HBC548 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HA200103 Issued Date : 2001.10.01 Revised Date : 2004.07.16 Page No. : 1/4 Description The HBC548 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature.......................................................................................................................... -55 to +150 °C Junction Temperature.................................................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (TA=25°C)....................................................
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