* High fT: fT=400MHz
* High breakdown voltage: VCEO=-120Vmin
* Small reverse transfer capacitance and excellent HF response Absolute Maximum Ratings (Ta=25°C)
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C
* Maximum Po
HJ1538
Hi-Sincerity Mocroelectronics
31.03 KB
Pnp epitaxial planar transistor.
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6020-B Issued Date : 1996.04.15 Revised Date : 2000.11.01 Page No. : 1/3
HJ1538
PNP EPITAXIAL PLAN.
📁 Related Datasheet
HJ10387 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HJ1109 PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HJ112 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HJ117 PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HJ11867 Three-channel fluxgate signal processing IC (ETC)
HJ12003 Power Divider (Signal)
HJ122 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HJ127 PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HJ13002 NPN Epitaxial Silicon Transistor (Hefei Hejing)
HJ14C NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
