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HMBT5089, HMBT5089_Hi - NPN Transistor

HMBT5089 Description

HI-SINCERITY MICROELECTRONICS CORP.HMBT5089 NPN EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6816 Issued Date : 1993.08.26 Revised Date : 2004.09.08 Pa.
The HMBT5089 is designed for low noise, high gain, general purpose amplifier applications. Maximum Tempe.

HMBT5089 Applications

* Absolute Maximum Ratings SOT-23
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW
* Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage

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This datasheet PDF includes multiple part numbers: HMBT5089, HMBT5089_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HMBT5089, HMBT5089_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
37.91 KB
Datasheet
HMBT5089_Hi-SincerityMocroelectronics.pdf
Description
NPN Transistor
Note
This datasheet PDF includes multiple part numbers: HMBT5089, HMBT5089_Hi.
Please refer to the document for exact specifications by model.

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NPN Transistor Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HMBT5089-like datasheet

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