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HMBT5401, HMBT5401_Hi - PNP Transistor

HMBT5401 Description

HI-SINCERITY MICROELECTRONICS CORP.HMBT5401 PNP EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6819 Issued Date : 1993.06.30 Revised Date : 2004.09.07 Pa.
The HMBT5401 is designed for general purpose applications requiring high breakdown voltages. High Collector-Emitter Breakdown Volta.

HMBT5401 Features

* High Collector-Emitter Breakdown Voltage (BVCEO=150V@IC=1mA)
* Complements to NPN Type HMBT5551 SOT-23 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HMBT5401, HMBT5401_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HMBT5401, HMBT5401_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
38.75 KB
Datasheet
HMBT5401_Hi-SincerityMocroelectronics.pdf
Description
PNP Transistor
Note
This datasheet PDF includes multiple part numbers: HMBT5401, HMBT5401_Hi.
Please refer to the document for exact specifications by model.

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PNP Transistor Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HMBT5401-like datasheet

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