HMBT5401, HMBT5401_Hi PNP Transistor

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.HMBT5401 PNP EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6819 Issued Date : 1993.06.30 Revised Date : 2004.09.07 Pa.
The HMBT5401 is designed for general purpose applications requiring high breakdown voltages. High Collector-Emitter Breakdown Volta.

📥 Download Datasheet

HMBT5401 Datasheet Preview — This datasheet PDF includes multiple part numbers: HMBT5401, HMBT5401_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HMBT5401, HMBT5401_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 38.75 KB
Datasheet: HMBT5401_Hi-SincerityMocroelectronics.pdf
Description: PNP Transistor
Note: This datasheet PDF includes multiple part numbers: HMBT5401, HMBT5401_Hi.
Please refer to the document for exact specifications by model.

Features

* High Collector-Emitter Breakdown Voltage (BVCEO=150V@IC=1mA)
* Complements to NPN Type HMBT5551 SOT-23 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power

HMBT5401 Distributors

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HMBT5401_Hi PNP Transistor Hi-Sincerity Mocroelectronics

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