* High Collector-Emitter Breakdown Voltage (BVCEO=150V@IC=1mA)
* Complements to NPN Type HMBT5551 SOT-23 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power
HMBT5401
Hi-Sincerity Mocroelectronics
38.75 KB
Pnp transistor.
HI-SINCERITY MICROELECTRONICS CORP. HMBT5401 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6819 Issued Date : 1993.06.30 Revised Date : 2004.09.07 Pa.
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