HMBT5551, HMBT5551_Hi NPN Transistor

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.HMBT5551 NPN EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6838 Issued Date : 1994.07.29 Revised Date : 2004.09.07 Pa.
The HMBT5551 is designed for general purpose applications requiring high Breakdown Voltages. Maximum Tem.

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HMBT5551 Datasheet Preview — This datasheet PDF includes multiple part numbers: HMBT5551, HMBT5551_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HMBT5551, HMBT5551_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 40.89 KB
Datasheet: HMBT5551_Hi-SincerityMocroelectronics.pdf
Description: NPN Transistor
Note: This datasheet PDF includes multiple part numbers: HMBT5551, HMBT5551_Hi.
Please refer to the document for exact specifications by model.

Applications

* requiring high Breakdown Voltages. Absolute Maximum Ratings SOT-23
* Maximum Temperatures Storage Temperature -55 + 150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW
* Maximum Voltages and Currents (TA=25°C) V

HMBT5551 Distributors

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HMBT5551_Hi NPN Transistor Hi-Sincerity Mocroelectronics

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