HMBT5551 Datasheet - Hi-Sincerity Mocroelectronics

NPN Transistor

HMBT5551 General Description

The HMBT5551 is designed for general purpose applications requiring high Breakdown Voltages. Absolute Maximum Ratings SOT-23 * Maximum Temperatures Storage Temperature -55 + 150 °C Junction Temperature +150 °C Maximum * Maximum Power Dissipation Total Power Dissipation (TA=25°C).

HMBT5551 Datasheet (40.89 KB)

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HMBT5551

Manufacturer:

Hi-Sincerity Mocroelectronics

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40.89 KB

Description:

Npn transistor.
HI-SINCERITY MICROELECTRONICS CORP. HMBT5551 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6838 Issued Date : 1994.07.29 Revised Date : 2004.09.07 Pa.

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HMBT5551 General Description

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