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HMBT6517, HMBT6517_Hi - NPN Transistor

HMBT6517 Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6836 Issued Date : 1994.07.20 Revised Date : 2004.09.08 Page No.: 1/4 HMBT6517 NPN EPITAXIAL PLA.
The HMBT6517 is designed for general purpose applications requiring high breakdown voltages. High Collector-Emitter Breakdown Volt.

HMBT6517 Features

* High Collector-Emitter Breakdown Voltage
* Low Collector-Emitter Saturation Voltage
* The HMBT6517 is complementary to HMBT6520 Absolute Maximum Ratings SOT-23
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HMBT6517, HMBT6517_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HMBT6517, HMBT6517_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
40.00 KB
Datasheet
HMBT6517_Hi-SincerityMocroelectronics.pdf
Description
NPN Transistor
Note
This datasheet PDF includes multiple part numbers: HMBT6517, HMBT6517_Hi.
Please refer to the document for exact specifications by model.

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NPN Transistor Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HMBT6517-like datasheet

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