HMBT6517, HMBT6517_Hi NPN Transistor

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6836 Issued Date : 1994.07.20 Revised Date : 2004.09.08 Page No.: 1/4 HMBT6517 NPN EPITAXIAL PLA.
The HMBT6517 is designed for general purpose applications requiring high breakdown voltages. High Collector-Emitter Breakdown Volt.

📥 Download Datasheet

HMBT6517 Datasheet Preview — This datasheet PDF includes multiple part numbers: HMBT6517, HMBT6517_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HMBT6517, HMBT6517_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 40.00 KB
Datasheet: HMBT6517_Hi-SincerityMocroelectronics.pdf
Description: NPN Transistor
Note: This datasheet PDF includes multiple part numbers: HMBT6517, HMBT6517_Hi.
Please refer to the document for exact specifications by model.

Features

* High Collector-Emitter Breakdown Voltage
* Low Collector-Emitter Saturation Voltage
* The HMBT6517 is complementary to HMBT6520 Absolute Maximum Ratings SOT-23
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum

HMBT6517 Distributors

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HMBT6517_Hi NPN Transistor Hi-Sincerity Mocroelectronics

Hi-Sincerity Mocroelectronics HMBT6517-like datasheet