HMBT6520, HMBT6520_Hi PNP Transistor

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6806 Issued Date : 1996.04.10 Revised Date : 2004.09.08 Page No.: 1/4 HMBT6520 PNP EPITAXIAL PLAN.
The HMBT6520 is designed for general purpose applications requiring high breakdown voltages. High Collector-Emitter Breakdown Vol.

📥 Download Datasheet

HMBT6520 Datasheet Preview — This datasheet PDF includes multiple part numbers: HMBT6520, HMBT6520_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HMBT6520, HMBT6520_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 38.13 KB
Datasheet: HMBT6520_Hi-SincerityMocroelectronics.pdf
Description: PNP Transistor
Note: This datasheet PDF includes multiple part numbers: HMBT6520, HMBT6520_Hi.
Please refer to the document for exact specifications by model.

Features

* High Collector-Emitter Breakdown Voltage
* Low Collector-Emitter Saturation Voltage
* The HMBT6520 is complementary to HMBT6517 SOT-23 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum

HMBT6520 Distributors

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HMBT6520_Hi PNP Transistor Hi-Sincerity Mocroelectronics

Hi-Sincerity Mocroelectronics HMBT6520-like datasheet