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HMBT6520, HMBT6520_Hi - PNP Transistor

HMBT6520 Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6806 Issued Date : 1996.04.10 Revised Date : 2004.09.08 Page No.: 1/4 HMBT6520 PNP EPITAXIAL PLAN.
The HMBT6520 is designed for general purpose applications requiring high breakdown voltages. High Collector-Emitter Breakdown Vol.

HMBT6520 Features

* High Collector-Emitter Breakdown Voltage
* Low Collector-Emitter Saturation Voltage
* The HMBT6520 is complementary to HMBT6517 SOT-23 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HMBT6520, HMBT6520_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HMBT6520, HMBT6520_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
38.13 KB
Datasheet
HMBT6520_Hi-SincerityMocroelectronics.pdf
Description
PNP Transistor
Note
This datasheet PDF includes multiple part numbers: HMBT6520, HMBT6520_Hi.
Please refer to the document for exact specifications by model.

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PNP Transistor Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HMBT6520-like datasheet

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