Description
HI-SINCERITY MICROELECTRONICS CORP.HMBT8050 NPN EPITAXIAL TRANSISTOR Spec.No.: HE6812 Issued Date : 1992.08.25 Revised Date : 2004.08.17 Page No..
The HMBT8050 is designed for general purpose amplifier applications.
High DC Current hFE=150-400 at IC=150mA.
Complementa.
Features
* High DC Current hFE=150-400 at IC=150mA
* Complementary to HMBT8550
SOT-23
Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW