* High DC Current hFE=150-400 at IC=150mA
* Complementary to HMBT8550 SOT-23 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW
HMBT8050
Hi-Sincerity Mocroelectronics
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Npn transistor.
HI-SINCERITY MICROELECTRONICS CORP. HMBT8050 NPN EPITAXIAL TRANSISTOR Spec. No. : HE6812 Issued Date : 1992.08.25 Revised Date : 2004.08.17 Page No. .
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