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HMBT8050, HMBT8050_Hi - NPN Transistor

HMBT8050 Description

HI-SINCERITY MICROELECTRONICS CORP.HMBT8050 NPN EPITAXIAL TRANSISTOR Spec.No.: HE6812 Issued Date : 1992.08.25 Revised Date : 2004.08.17 Page No..
The HMBT8050 is designed for general purpose amplifier applications. High DC Current hFE=150-400 at IC=150mA. Complementa.

HMBT8050 Features

* High DC Current hFE=150-400 at IC=150mA
* Complementary to HMBT8550 SOT-23 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HMBT8050, HMBT8050_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HMBT8050, HMBT8050_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
37.90 KB
Datasheet
HMBT8050_Hi-SincerityMocroelectronics.pdf
Description
NPN Transistor
Note
This datasheet PDF includes multiple part numbers: HMBT8050, HMBT8050_Hi.
Please refer to the document for exact specifications by model.

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Hi-Sincerity Mocroelectronics HMBT8050-like datasheet

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