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HMBT8550, HMBT8550_Hi - PNP Transistor

HMBT8550 Description

HI-SINCERITY MICROELECTRONICS CORP.HMBT8550 PNP EPITAXIAL TRANSISTOR Spec.No.: HE6813 Issued Date : 1997.08.11 Revised Date : 2004.08.17 Page No..
The HMBT8550 is designed for general purpose amplifier applications. High DC Current: hFE=150-400 at IC=150mA. Complement.

HMBT8550 Features

* High DC Current: hFE=150-400 at IC=150mA
* Complementary to HMBT8050 SOT-23 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HMBT8550, HMBT8550_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HMBT8550, HMBT8550_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
39.18 KB
Datasheet
HMBT8550_Hi-SincerityMocroelectronics.pdf
Description
PNP Transistor
Note
This datasheet PDF includes multiple part numbers: HMBT8550, HMBT8550_Hi.
Please refer to the document for exact specifications by model.

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PNP Transistor Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HMBT8550-like datasheet

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