Description
HI-SINCERITY MICROELECTRONICS CORP.HMBT8550 PNP EPITAXIAL TRANSISTOR Spec.No.: HE6813 Issued Date : 1997.08.11 Revised Date : 2004.08.17 Page No..
The HMBT8550 is designed for general purpose amplifier applications.
High DC Current: hFE=150-400 at IC=150mA.
Complement.
Features
* High DC Current: hFE=150-400 at IC=150mA
* Complementary to HMBT8050
SOT-23
Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW