* High DC Current: hFE=150-400 at IC=150mA
* Complementary to HMBT8050 SOT-23 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW
HMBT8550
Hi-Sincerity Mocroelectronics
39.18 KB
Pnp transistor.
HI-SINCERITY MICROELECTRONICS CORP. HMBT8550 PNP EPITAXIAL TRANSISTOR Spec. No. : HE6813 Issued Date : 1997.08.11 Revised Date : 2004.08.17 Page No. .
📁 Related Datasheet
HMBT8599 PNP Transistor (Hi-Sincerity Mocroelectronics)
HMBT8050 NPN Transistor (Hi-Sincerity Mocroelectronics)
HMBT8099 NPN Transistor (Hi-Sincerity Mocroelectronics)
HMBT1015 PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HMBT1815 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HMBT2222A NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HMBT2222AXLT1G General Purpose Transistor NPN Silicon (HI-SINCERITY)
HMBT2369 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HMBT2484 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HMBT2907A PNP Transistor (Hi-Sincerity Mocroelectronics)
