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HMBTH10, HMBTH10_Hi - NPN Transistor

HMBTH10 Description

HI-SINCERITY MICROELECTRONICS CORP.HMBTH10 NPN EPITAXIAL PLANAR TRANSISTOR Spec.No.: HN200101 Issued Date : 2000.02.01 Revised Date : 2008.07.07 P.
The HMBTH10 is designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver. High frequency. Very low.

HMBTH10 Features

* High frequency
* Very low capacitance SOT-23 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW
* Maximum Voltages and Currents

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This datasheet PDF includes multiple part numbers: HMBTH10, HMBTH10_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HMBTH10, HMBTH10_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
87.90 KB
Datasheet
HMBTH10_Hi-SincerityMocroelectronics.pdf
Description
NPN Transistor
Note
This datasheet PDF includes multiple part numbers: HMBTH10, HMBTH10_Hi.
Please refer to the document for exact specifications by model.

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Hi-Sincerity Mocroelectronics HMBTH10-like datasheet

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