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HJ122, HJ122_Hi - NPN EPITAXIAL PLANAR TRANSISTOR

HJ122 Description

HI-SINCERITY MICROELECTRONICS CORP.HJ122 NPN EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6009 Issued Date : 1996.02.03 Revised Date :2008.04.09 Page N.
TO-252 The HJ122 is designed for use in general purposes and low speed switching applications. High DC c.

HJ122 Features

* High DC current gain
* Built-in a damper diode at E-C Absolute Maximum Ratings (TA=25°C) B R1 R2 E
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C
* Maximum Power Dissipation Total Power Dissipation (TC=25°C) 20 W

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HJ122, HJ122_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HJ122, HJ122_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
95.62 KB
Datasheet
HJ122_Hi-SincerityMocroelectronics.pdf
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HJ122, HJ122_Hi.
Please refer to the document for exact specifications by model.

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NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HJ122-like datasheet