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HMBT5551, HMBT5551_Hi - NPN Transistor

HMBT5551 Description

HI-SINCERITY MICROELECTRONICS CORP.HMBT5551 NPN EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6838 Issued Date : 1994.07.29 Revised Date : 2004.09.07 Pa.
The HMBT5551 is designed for general purpose applications requiring high Breakdown Voltages. Maximum Tem.

HMBT5551 Applications

* requiring high Breakdown Voltages. Absolute Maximum Ratings SOT-23
* Maximum Temperatures Storage Temperature -55 + 150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW
* Maximum Voltages and Currents (TA=25°C) V

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This datasheet PDF includes multiple part numbers: HMBT5551, HMBT5551_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HMBT5551, HMBT5551_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
40.89 KB
Datasheet
HMBT5551_Hi-SincerityMocroelectronics.pdf
Description
NPN Transistor
Note
This datasheet PDF includes multiple part numbers: HMBT5551, HMBT5551_Hi.
Please refer to the document for exact specifications by model.

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NPN Transistor Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HMBT5551-like datasheet

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