HSB772S, HSB772S_Hi - PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

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HSB772S Datasheet Preview — This datasheet PDF includes multiple part numbers: HSB772S, HSB772S_Hi. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: HSB772S, HSB772S_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 44.76 KB
Datasheet: HSB772S_Hi-SincerityMocroelectronics.pdf
Description: PNP EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: HSB772S, HSB772S_Hi.
Please refer to the document for exact specifications by model.

HSB772S Product details

Description

The HSB772S is designed for using in output stage of 0.75W amplifier, voltage regulator, DC-DC converter and driver. Maximum Temperatures Storage Temperature -55 to +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 750 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage -40 V VCEO Collector to Emitter Voltage -30 V VEBO Emitter to Base Voltage -5 V IC Co

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PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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