2SJ575 - Silicon P Channel MOS FET High Speed Switching

Hitachi Semiconductor

Datasheet Details

Part number	2SJ575
Manufacturer	Hitachi Semiconductor
File Size	39.60 KB
Description	Silicon P Channel MOS FET High Speed Switching
Datasheet	2SJ575_HitachiSemiconductor.pdf

Low on-resistance R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 Ω typ. (V GS = -4 V , ID = -50 mA).
4 V gate drive device.
Small package (MPAK) Outline MPAK 3 1 D 3 2 2 G 1. Source 2. Gate 3. Drain S 1 2SJ575 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS I.

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Published: Mar 30, 2005 |