2SJ576 Silicon P Channel MOS FET High Speed Switching

Hitachi Semiconductor

Description

2SJ576 Silicon P Channel MOS FET High Speed Switching ADE-208-741B (Z) 3rd.Edition.June 1999 .

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Datasheet Specifications

Part number: 2SJ576
Manufacturer: Hitachi Semiconductor
File Size: 27.12 KB
Datasheet: 2SJ576_HitachiSemiconductor.pdf
Description: Silicon P Channel MOS FET High Speed Switching

Features

* Low on-resistance R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 Ω typ. (V GS = -4 V , ID = -50 mA)
* 4 V gate drive device.
* Small package (CMPAK) Outline CMPAK 3 1 2 D 3 2 G 1. Source 2. Gate 3. Drain S 1 2SJ576 Absolute Maximum Ratings (Ta = 25°C) Item D

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2SJ576 Silicon Channel MOS FET High Speed Switching Hitachi Semiconductor

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