Part number:
2SJ576
Manufacturer:
Hitachi Semiconductor
File Size:
27.12 KB
Description:
Silicon p channel mos fet high speed switching.
* Low on-resistance R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 Ω typ. (V GS = -4 V , ID = -50 mA)
* 4 V gate drive device.
* Small package (CMPAK) Outline CMPAK 3 1 2 D 3 2 G 1. Source 2. Gate 3. Drain S 1 2SJ576 Absolute Maximum Ratings (Ta = 25°C) Item D
2SJ576
Hitachi Semiconductor
27.12 KB
Silicon p channel mos fet high speed switching.
📁 Related Datasheet
2SJ574 Silicon P-Channel MOSFET (Hitachi Semiconductor)
2SJ574 P-Channel MOSFET (Renesas)
2SJ575 Silicon P Channel MOS FET High Speed Switching (Hitachi Semiconductor)
2SJ578 Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
2SJ579 Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
2SJ50 P-Channel MOSFET (Hitachi Semiconductor)
2SJ501 P-Channel MOSFET (Sanyo Semicon Device)
2SJ502 P-Channel MOSFET (Sanyo Semicon Device)
2SJ503 P-Channel MOSFET (Sanyo Semicon Device)
2SJ504 P-Channel MOSFET (Hitachi Semiconductor)
