2SJ576 - Silicon P Channel MOS FET High Speed Switching

Hitachi Semiconductor

Datasheet Details

Part number	2SJ576
Manufacturer	Hitachi Semiconductor
File Size	27.12 KB
Description	Silicon P Channel MOS FET High Speed Switching
Datasheet	2SJ576_HitachiSemiconductor.pdf

Low on-resistance R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 Ω typ. (V GS = -4 V , ID = -50 mA).
4 V gate drive device.
Small package (CMPAK) Outline CMPAK 3 1 2 D 3 2 G 1. Source 2. Gate 3. Drain S 1 2SJ576 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS.

📁 2SJ576 Similar Datasheet

Other Datasheets by Hitachi Semiconductor

Published: Mar 30, 2005 |