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2SK1859 - Silicon N-Channel MOSFET

Datasheet Summary

Features

  • Low on-resistance High speed switching Low Drive Current No secondary breakdown Suitable for Switching regulator Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1859 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.

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Datasheet Details

Part number 2SK1859
Manufacturer Hitachi Semiconductor
File Size 33.02 KB
Description Silicon N-Channel MOSFET
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2SK1859 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low Drive Current No secondary breakdown Suitable for Switching regulator Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1859 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.
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