Part number:
2SK2939S
Manufacturer:
Hitachi Semiconductor
File Size:
55.80 KB
Description:
Silicon n channel mos fet.
* Low on-resistance R DS =0.020 Ω typ.
* High speed switching
* 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D G 1 2 1 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2939(L),2SK2939(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source
2SK2939S
Hitachi Semiconductor
55.80 KB
Silicon n channel mos fet.
📁 Related Datasheet
2SK2939 - Silicon N Channel MOS FET
(Hitachi Semiconductor)
2SK2939(L),2SK2939(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-562D (Z) 5th. Edition Jun 1998 Features
• Low on-resistance R DS =.
2SK2939L - Silicon N Channel MOS FET
(Hitachi Semiconductor)
2SK2939(L),2SK2939(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-562D (Z) 5th. Edition Jun 1998 Features
• Low on-resistance R DS =.
2SK2930 - Silicon N Channel MOS FET
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2SK2930
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ADE-208-553C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =0.020 Ω typ. •.
2SK2931 - Silicon N-Channel MOSFET
(Renesas)
2SK2931
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =0.010 Ω typ.
• High speed switching • 4 V gate drive de.
2SK2931 - Silicon N-Channel MOSFET
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2SK2931
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ADE-208-554C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =0.010 Ω typ. •.
2SK2932 - Silicon N Channel MOS FET
(Hitachi Semiconductor)
2SK2932
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-555B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS =0.055 Ω typ. •.
2SK2933 - Silicon N Channel MOS FET
(Hitachi Semiconductor)
2SK2933
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-556B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.040Ω ty.
2SK2934 - Silicon N Channel MOS FET
(Hitachi Semiconductor)
2SK2934
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-557B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS =0.026 Ω typ. •.
