4AK16 - Silicon N-Channel Power MOS FET Array
(Hitachi Semiconductor)
4AK16
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance R DS(on) ≤ 0.18 , VGS = 10 V, I D = .
4AK17 - Silicon N-Channel Power MOS FET Array
(Hitachi Semiconductor)
4AK17
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance R DS(on) ≤ 0.045 , VGS = 10 V, I D =.
4AK18 - Silicon N-Channel Power MOS FET Array
(Hitachi Semiconductor)
4AK18
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance R DS(on) ≤ 0.38 , VGS = 10 V, I D = .
4AK19 - Silicon N Channel MOS FET High Speed Power Switching
(Hitachi Semiconductor)
4AK19
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-727 (Z) 1st. Edition February 1999 Features
• Low on-resistance N Channel: R DS(on.
4AK20 - Silicon N-Channel Power MOS FET Array
(Hitachi Semiconductor)
4AK20
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2..
4AK21 - Silicon N-Channel Power MOS FET Array
(Hitachi Semiconductor)
4AK21
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance R DS(on) 0.09 , VGS = 10 V, I D = 4 .