4AK16 Datasheet, Array, Hitachi Semiconductor

4AK16 Features

  • Array
  • Low on-resistance R DS(on) ≤ 0.18 , VGS = 10 V, I D = 5 A R DS(on) ≤ 0.25 , VGS = 4 V, I D = 5 A
  • Capable of 4 V gate drive
  • Low drive current
  • High

PDF File Details

Part number:

4AK16

Manufacturer:

Hitachi Semiconductor

File Size:

50.20kb

Download:

📄 Datasheet

Description:

Silicon n-channel power mos fet array.

Datasheet Preview: 4AK16 📥 Download PDF (50.20kb)
Page 2 of 4AK16 Page 3 of 4AK16

TAGS

4AK16
Silicon
N-Channel
Power
MOS
FET
Array
Hitachi Semiconductor

📁 Related Datasheet

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4AK17 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK17 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.045 , VGS = 10 V, I D =.

4AK18 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK18 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.38 , VGS = 10 V, I D = .

4AK19 - Silicon N Channel MOS FET High Speed Power Switching (Hitachi Semiconductor)
4AK19 Silicon N Channel MOS FET High Speed Power Switching ADE-208-727 (Z) 1st. Edition February 1999 Features • Low on-resistance N Channel: R DS(on.

4AK20 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK20 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2..

4AK21 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK21 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.09 , VGS = 10 V, I D = 4 .

4AK22 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK22 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.4 , VGS = 10 V, I D = 1.5.

4AK23 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK23 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2..

4AK25 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK25 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.45 , VGS = 10 V, I D = 1 .

4AK26 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK26 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.06 , VGS = 10 V, I D = .

Stock and price

Bel Power Solutions
Isolated DC/DC Converters - Chassis Mount Bel Power
Mouser Electronics
AK-1615-7R
2 In Stock
Qty : 1 units
Unit Price : $1391.12
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