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4AK16 Silicon N-Channel Power MOS FET Array

4AK16 Description

4AK16 Silicon N-Channel Power MOS FET Array Application High speed power switching .

4AK16 Features

* Low on-resistance R DS(on) ≤ 0.18 , VGS = 10 V, I D = 5 A R DS(on) ≤ 0.25 , VGS = 4 V, I D = 5 A
* Capable of 4 V gate drive
* Low drive current
* High speed switching
* High density mounting
* Suitable for motor driver, solenoid driver and lamp driv

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Datasheet Details

Part number
4AK16
Manufacturer
Hitachi Semiconductor
File Size
50.20 KB
Datasheet
4AK16_HitachiSemiconductor.pdf
Description
Silicon N-Channel Power MOS FET Array

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