4AK17 Datasheet, Array, Hitachi Semiconductor

4AK17 Features

  • Array
  • Low on-resistance R DS(on) ≤ 0.045 , VGS = 10 V, I D = 10 A R DS(on) ≤ 0.065 , VGS = 4 V, I D = 10 A
  • Capable of 4 V gate drive
  • Low drive current

PDF File Details

Part number:

4AK17

Manufacturer:

Hitachi Semiconductor

File Size:

50.15kb

Download:

📄 Datasheet

Description:

Silicon n-channel power mos fet array.

Datasheet Preview: 4AK17 📥 Download PDF (50.15kb)
Page 2 of 4AK17 Page 3 of 4AK17

TAGS

4AK17
Silicon
N-Channel
Power
MOS
FET
Array
Hitachi Semiconductor

📁 Related Datasheet

4AK15 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK15 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.07 , VGS = 10 V, I D = .

4AK16 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK16 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.18 , VGS = 10 V, I D = .

4AK18 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK18 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.38 , VGS = 10 V, I D = .

4AK19 - Silicon N Channel MOS FET High Speed Power Switching (Hitachi Semiconductor)
4AK19 Silicon N Channel MOS FET High Speed Power Switching ADE-208-727 (Z) 1st. Edition February 1999 Features • Low on-resistance N Channel: R DS(on.

4AK20 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK20 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2..

4AK21 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK21 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.09 , VGS = 10 V, I D = 4 .

4AK22 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK22 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.4 , VGS = 10 V, I D = 1.5.

4AK23 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK23 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2..

4AK25 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK25 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.45 , VGS = 10 V, I D = 1 .

4AK26 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK26 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.06 , VGS = 10 V, I D = .

Stock and price

Rochester Electronics LLC
N-CHANNEL POWER MOSFET
DigiKey
4AK17-91
0 In Stock
Qty : 14 units
Unit Price : $22.25
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts