4AK19 Silicon N Channel MOS FET High Speed Power Switching

Hitachi Semiconductor

Description

4AK19 Silicon N Channel MOS FET High Speed Power Switching ADE-208-727 (Z) 1st.Edition February 1999 .

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Datasheet Specifications

Part number: 4AK19
Manufacturer: Hitachi Semiconductor
File Size: 53.09 KB
Datasheet: 4AK19_HitachiSemiconductor.pdf
Description: Silicon N Channel MOS FET High Speed Power Switching

Features

* Low on-resistance N Channel: R DS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2.5 A R DS(on) ≤ 0.6 Ω, VGS = 4 V, ID = 2.5 A
* 4 V gate drive devices.
* High density mounting Outline SP-10 3 D 2G 4 G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1 S S 10 1, 10. Source 2, 4, 6, 8. Gate 3,

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