Datasheet4U Logo Datasheet4U.com

4AK19

Silicon N Channel MOS FET High Speed Power Switching

Image Manufacturer B2B MPN Description Distributor Stock Quantity Price Buy Now
Distributor Boeing BACS12HL4AK19 Bisco Industries 9 0
$0

4AK19 Datasheet (53.09 KB)

Preview of 4AK19 PDF Datasheet

Datasheet Details

Part number:

4AK19

Manufacturer:

Hitachi Semiconductor

File Size:

53.09 KB

Description:

Silicon n channel mos fet high speed power switching.

4AK19 Features

* Low on-resistance N Channel: R DS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2.5 A R DS(on) ≤ 0.6 Ω, VGS = 4 V, ID = 2.5 A

* 4 V gate drive devices.

* High density mounting Outline SP-10 3 D 2G 4 G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1 S S 10 1, 10. Source 2, 4, 6, 8. Gate 3,

📁 Related Datasheet

4AK15 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK15 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.07 , VGS = 10 V, I D = .

4AK16 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK16 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.18 , VGS = 10 V, I D = .

4AK17 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK17 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.045 , VGS = 10 V, I D =.

4AK18 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK18 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.38 , VGS = 10 V, I D = .

4AK20 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK20 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2..

4AK21 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK21 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.09 , VGS = 10 V, I D = 4 .

TAGS

4AK19 Silicon Channel MOS FET High Speed Power Switching Hitachi Semiconductor

Image Gallery

4AK19 Datasheet Preview Page 2 4AK19 Datasheet Preview Page 3

4AK19 Distributor