4AK19 - Silicon N Channel MOS FET High Speed Power Switching

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Hitachi Semiconductor

Part number	4AK19
Manufacturer	Hitachi Semiconductor
File Size	53.09 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Datasheet	4AK19 Datasheet
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Low on-resistance N Channel: R DS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2.5 A R DS(on) ≤ 0.6 Ω, VGS = 4 V, ID = 2.5 A.
4 V gate drive devices.
High density mounting Outline SP-10 3 D 2G 4 G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1 S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain 4AK19 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipat.

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Published: Apr 1, 2005 |