4AK18 Silicon N-Channel Power MOS FET Array

Hitachi Semiconductor

Description

4AK18 Silicon N-Channel Power MOS FET Array Application High speed power switching .

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Datasheet Specifications

Part number: 4AK18
Manufacturer: Hitachi Semiconductor
File Size: 49.88 KB
Datasheet: 4AK18_HitachiSemiconductor.pdf
Description: Silicon N-Channel Power MOS FET Array

Features

* Low on-resistance R DS(on) ≤ 0.38 , VGS = 10 V, I D = 1 A R DS(on) ≤ 0.53 , VGS = 4 V, I D = 1 A
* Capable of 4 V gate drive
* Low drive current
* High speed switching
* High density mounting
* Suitable for motor driver, solenoid driver and lamp driv

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4AK18 Silicon N-Channel Power MOS FET Array Hitachi Semiconductor

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