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MBM500E33E2-R Datasheet - Hitachi

MBM500E33E2-R Silicon N-channel IGBT

MBM500E33E2-R Features

*  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.  Low noise recovery: Ultra soft fast recovery diode.  High thermal fatigue durability: (delta Tc=70K, N30,000cycles) AlSiC base-plat

MBM500E33E2-R Datasheet (556.83 KB)

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Datasheet Details

Part number:

MBM500E33E2-R

Manufacturer:

Hitachi

File Size:

556.83 KB

Description:

Silicon n-channel igbt.

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MBM500E33E2-R Silicon N-channel IGBT Hitachi

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