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MBM500E33E2-R Silicon N-channel IGBT

MBM500E33E2-R Description

IGBT MODULE MBM500E33E2-R Silicon N-channel IGBT 3300V E2 version Spec.No.IGBT-SP-14005 R0 P1 .

MBM500E33E2-R Features

*  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.  Low noise recovery: Ultra soft fast recovery diode.  High thermal fatigue durability: (delta Tc=70K, N30,000cycles) AlSiC base-plat

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Datasheet Details

Part number
MBM500E33E2-R
Manufacturer
Hitachi
File Size
556.83 KB
Datasheet
MBM500E33E2-R-Hitachi.pdf
Description
Silicon N-channel IGBT

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Silicon N-channel IGBT Hitachi
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