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2SH11 Silicon N-Channel IGBT

2SH11 Description

ADE *208 *274 (Z) 2SH11 Silicon N-Channel IGBT 1st.Edition Feb.1995 Application TO *220AB High speed power switching .
ge without notice.

2SH11 Features

* 2
* High speed switching
* Low on saturation voltage 1 1 3 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature

2SH11 Applications

* ge without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in a

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Datasheet Details

Part number
2SH11
Manufacturer
Hitachi Semiconductor
File Size
41.32 KB
Datasheet
2SH11_HitachiSemiconductor.pdf
Description
Silicon N-Channel IGBT

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Silicon N-Channel IGBT Hitachi Semiconductor
Hitachi Semiconductor 2SH11-like datasheet