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2SJ575 Silicon P Channel MOS FET High Speed Switching

2SJ575 Description

2SJ575 Silicon P Channel MOS FET High Speed Switching ADE-208-740B (Z) 3rd.Edition.June 1999 .

2SJ575 Features

* Low on-resistance R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 Ω typ. (V GS = -4 V , ID = -50 mA)
* 4 V gate drive device.
* Small package (MPAK) Outline MPAK 3 1 D 3 2 2 G 1. Source 2. Gate 3. Drain S 1 2SJ575 Absolute Maximum Ratings (Ta = 25°C) Item Dra

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Datasheet Details

Part number
2SJ575
Manufacturer
Hitachi Semiconductor
File Size
39.60 KB
Datasheet
2SJ575_HitachiSemiconductor.pdf
Description
Silicon P Channel MOS FET High Speed Switching

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Silicon Channel MOS FET High Speed Switching Hitachi Semiconductor
Hitachi Semiconductor 2SJ575-like datasheet