Datasheet4U Logo Datasheet4U.com

2SJ576 Silicon P Channel MOS FET High Speed Switching

2SJ576 Description

2SJ576 Silicon P Channel MOS FET High Speed Switching ADE-208-741B (Z) 3rd.Edition.June 1999 .

2SJ576 Features

* Low on-resistance R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 Ω typ. (V GS = -4 V , ID = -50 mA)
* 4 V gate drive device.
* Small package (CMPAK) Outline CMPAK 3 1 2 D 3 2 G 1. Source 2. Gate 3. Drain S 1 2SJ576 Absolute Maximum Ratings (Ta = 25°C) Item D

📥 Download Datasheet

Preview of 2SJ576 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
2SJ576
Manufacturer
Hitachi Semiconductor
File Size
27.12 KB
Datasheet
2SJ576_HitachiSemiconductor.pdf
Description
Silicon P Channel MOS FET High Speed Switching

📁 Related Datasheet

  • 2SJ578 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
  • 2SJ579 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
  • 2SJ501 - P-Channel MOSFET (Sanyo Semicon Device)
  • 2SJ502 - P-Channel MOSFET (Sanyo Semicon Device)
  • 2SJ503 - P-Channel MOSFET (Sanyo Semicon Device)
  • 2SJ505S - P-Channel MOSFET (VBsemi)
  • 2SJ507 - Silicon P-Channel MOSFET (Toshiba Semiconductor)
  • 2SJ508 - Silicon P-Channel MOSFET (Toshiba Semiconductor)

📌 All Tags

Silicon Channel MOS FET High Speed Switching Hitachi Semiconductor
Hitachi Semiconductor 2SJ576-like datasheet