2SK3000 - Silicon N Channel MOS FET

Hitachi Semiconductor

Datasheet Details

Low on-resistance R DS(on) = 0. 25Ω typ. (V GS = 10 V, ID = 450 mA).
4V gate drive devices.
Small package (MPAK).
Expansive drain to source surge power capability Outline MPAK 3 1 D 3 2 2 G 1. Source 2. Gate 3. Drain S 1 2SK3000 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS.

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Hitachi Semiconductor 2SK3000-like datasheet

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