Datasheet4U.com

PF08107B - MOS FET Power Amplifier

Hitachi Semiconductor

📥 Download Datasheet

PF08107B Datasheet Preview — Preview of PF08107B PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number: PF08107B
Manufacturer: Hitachi Semiconductor
File Size: 168.37 KB
Datasheet: PF08107B-HitachiSemiconductor.pdf
Description: MOS FET Power Amplifier

PF08107B Product details

Features

2 in / 2 out dual band amplifier.
Simple external circuit including output matching circuit.
One power control pin with one band switch.
High gain 3stage amplifier : 0 dBm input Typ.
Lead less thin & Small package : 8 × 13.75 × 1.6 mm Typ.
High efficiency : 50 % Typ at 35.0 dBm for E-GSM 43 % Typ at 32.0 dBm for DCS1800 Pin Arrangement.
RF-K-8 8 7G65 G G 12 G 34 1: Pin GSM 2: Vapc 3: Vdd1 4: Pout GSM 5: Pout DCS 6: Vdd2 7: Vctl 8.

📁 Related Datasheet

PF08109B - MOS FET Power Amplifier Module (Hitachi)
PF08109B-TB - Micro Module Specifications (Samsung Electronics)
PF08114B - MOS FET Power Amplifier Module (Renesas)
PF08122B - MOS FET Power Amplifier Module (Renesas)
PF08127B - MOS FET Power Amplifier Module (Renesas)
PF08134B - MOS FET Power Amplifier Module (Renesas Technology)
PF0010 - High Frequency Power MOS FET Module (Renesas Technology)
PF0027 - MOS FET Power Amplifier Module (Renesas Technology)

📌 All Tags

MOS FET Power Amplifier Hitachi Semiconductor

Hitachi Semiconductor PF08107B-like datasheet

PF08103A - MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone
PF08103B - MOS FET Power Amplifier
PF00105A - MOS FET Power Amplifier Module for AMPS Handy Phone
PF0030 - MOS FET Power Amplifier
PF0032 - MOS FET Power Amplifier
PF0121 - MOS FET Power Amplifier Module for GSM Mobile Phone

PF08107B Stock/Price