HX6256 Datasheet - Honeywell

HX6256 32K x 8 Static RAM

Typ 5.0 25 Max 5.5 125 VDD+0.3 50 Units V °C V ms CAPACITANCE (1) Symbol CI CO Parameter Input Capacitance Output Capacitance Typical (1) 5 7 Worst Case Min Max 7 9 Units pF pF Test Conditions VI=VDD or VSS, f=1 MHz VIO=VDD or VSS, f=1 MHz (1) This parameter is tested during initial design charact.

HX6256 32K x 8 Static RAM The 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation environments. The RAM operates over the full military temperature range and requires only a single 5 V ± 10% power supply. The RAM is available www.DataSheet4U.com with either TTL or CMOS compatible I.

HX6256 Features

* include tungsten via plugs, Honeywell’s proprietary SHARP planarization process, and a lightly doped drain (LDD) structure for improved short channel reliability. A 7 transistor (7T) memory cell is used for superior single event upset hardening, while three layer metal power bussing and the low coll

HX6256_Honeywell.pdf