* include tungsten via plugs, Honeywell’s proprietary SHARP planarization process, and a lightly doped drain (LDD) structure for improved short channel reliability. A 7 transistor (7T) memory cell is used for superior single event upset hardening, while three layer metal power bussing and the low coll
HX6256
Honeywell
820.79 KB
32k x 8 static ram.
HX6256 32K x 8 Static RAM
The 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industr.
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