HX6408 - 512k x 8 STATIC RAM

Honeywell

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Datasheet Details

Part number	HX6408
Manufacturer	Honeywell
File Size	205.42 KB
Description	512k x 8 STATIC RAM
Datasheet	HX6408_Honeywell.pdf

HX6408 Product details

Description

Typ Max 3.3 25 3.6 125 VDD+0.3 50 Units V °C V ms 4 www.honeywell.com HX6408 Advanced Information DC ELECTRICAL CHARACTERISTICS Symbol IDDSB Parameter Static Supply Current TA=25°C TA=125°C Static Supply Current Deselected Dynamic Supply Current, Selected (Write) 1 MHz 2 MHz 10 MHz 25 MHz 40 MHz Dynamic Supply Current, Selected (Read) 1 MHz 2 MHz 10 MHz 25 MHz 40 MHz Dynamic Supply Current, Deselected Dynamic Supply Current, Sleep Input Leakage Current Output Leakage Current Low-Level Inpu

Features

include tungsten via and contact plugs, Honeywell’s proprietary SHARP planarization process and a lightly doped drain (LDD) structure for improved short channel reliability. A seven transistor (7T) memory cell is used for superior single event upset hardening, while three layer metal power busing and the low collection volume SOI substrate provide improved dose rate hardening.

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Published: Jul 3, 2008 |