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HX6408 Datasheet - Honeywell

512k x 8 STATIC RAM

HX6408 Features

* include tungsten via and contact plugs, Honeywell’s proprietary SHARP planarization process and a lightly doped drain (LDD) structure for improved short channel reliability. A seven transistor (7T) memory cell is used for superior single event upset hardening, while three layer metal power busing an

HX6408 General Description

Typ Max 3.3 25 3.6 125 VDD+0.3 50 Units V °C V ms 4 www.honeywell.com HX6408 Advanced Information DC ELECTRICAL CHARACTERISTICS Symbol IDDSB Parameter Static Supply Current TA=25°C TA=125°C Static Supply Current Deselected Dynamic Supply Current, Selected (Write) 1 MHz 2 MHz 10 MHz 25 MHz 40 M.

HX6408 Datasheet (205.42 KB)

Preview of HX6408 PDF

Datasheet Details

Part number:

HX6408

Manufacturer:

Honeywell

File Size:

205.42 KB

Description:

512k x 8 static ram.
HX6408 Advanced Information HX6408 512k x 8 STATIC RAM www.DataSheet4U.com The 512K x 8 Radiation Hardened Static RAM is a high performance 524,288 .

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HX6408 512k STATIC RAM Honeywell

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