HF3FA
Hongfa Technology
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Subminiature high power relay.
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HF3F-L - SUBMINIATURE HIGH POWER LATCHING RELAY
(Hongfa Technology)
53,3}7
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Gbe^ Nh4@ F79:;7= 1@2
Gbe^ Nh4@:66:6=;=
Gbe^ Nh4@DQD7;668787:=;
0:9>.0> 1.>.
DhgmZ\m ZkkZg`^f^gm
7.
HF3FD - SUBMINIATURE HIGH POWER RELAY
(Hongfa Technology)
0.|.,
8:*3141~9:7- 01/0 65<-7 7-2~>
Gcf_ Ni4@ F79:;7= ,;-
Gcf_ Ni4@ :667:6;=
Gcf_ Ni4@ DQD7:66877:=<6
.C@MNKCL
U 7;B mqcn]bcha ][j[\cfcns U Gf[gg[\.
HF3FF - SUBMINIATURE HIGH POWER RELAY
(Hongfa Technology)
42+22
<>.7585-=>;1 4534 :9@1; ;16-B
Gcf_ Ni4@F79:;7= 0?1
Gcf_ Ni4@:668;87>
Gcf_ Ni4@R;67:>9;<
Gcf_ Ni4@DQD796686?>7=;
2GDQROGP
Y 7;B mqcn]bcha ][j[.
HF3FF-M - AUTOMOTIVE RELAY
(Hongfa Technology)
86-66~;
1BA=;=A9C5 ?5:1F
AYSMIHO 1SSOMIHVMRQU
?dj_1j^[\j beYa0 A[djhWb Zeeh beYa
6KHVWTKU
y 59? im_jY^_d] YWfWX_b_jo y PkXc_d_Wjkh[0 ijWdZWhZ MA@ b.
HF30-28F - NPN SILICON RF POWER TRANSISTOR
(Advanced Semiconductor)
HF30-28F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF30-28F is Designed for
PACKAGE STYLE .380 4L FLG
B .112 x 45° A
FEATURES:
• PG = 20.
HF30-28S - NPN SILICON RF POWER TRANSISTOR
(Advanced Semiconductor)
HF30-28S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF30-28S is Designed for
PACKAGE STYLE .380 4L STUD
.112x45° A
FEATURES:
• PG = 20 dB.
HF3000A-TM - IGBT inverter
(Soshin)
HF3000A-TM Series
3 Phase & 3 lines 250VAC
for EMC directive,class A,B Standard of High attenuation Type
5-100A EN60939-2 (file No.R50031751)
Applic.
HF3000A-TMA - IGBT inverter
(Soshin)
HF3000A-TMA Series
3 Phase & 3 lines 250VAC
for EMC directive,class A,B Standard of High attenuation Type
5-100A EN60939-2 (file No.R50031751)
Appli.
HF3000C-TM - IGBT inverter
(Soshin)
HF3000C-TM Series
3 Phase & 3 lines 500VAC
for EMC directive,class A,B Standard of High attenuation Type
UL1283 (file No.E102708) EN60939-2 (file No.
HF3000C-TMA - IGBT inverter
(Soshin)
HF3000C-TMA Series
3 Phase & 3 lines 460VAC
for EMC directive,class A,B Standard of High attenuation Type
EN60939-2 (file No.R50031226)
Application
.
