CS2N70A3R1-G Datasheet, Mosfet, Huajing Microelectronics

✔ CS2N70A3R1-G Features

l Fast Switching l Low ON Resistance(Rdson≤6.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:3.8pF) l 100% Single Pulse avalanche

✔ CS2N70A3R1-G Application

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDSS ID

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CS2N70A3R1-G

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Huajing Microelectronics

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📄 Datasheet

Description:

Silicon n-channel power mosfet. VDSS 700 V CS2N70 A3R1-G, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD

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CS2N70A3R1-G Silicon N-Channel Power MOSFET Huajing Microelectronics