CS2N70A3R1-G Datasheet (Huajing Microelectronics) - Silicon N-Channel Power MOSFET

CS2N70A3R1-G, Silicon N-Channel Power MOSFET

VDSS 700 V CS2N70 A3R1-G, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 4.7 Ω performance and enhance the avalanche energy.

The transistor can be used in var

CS2N70A3R1-G Features

* l Fast Switching l Low ON Resistance(Rdson≤6.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:3.8pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDS