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CS2N70A3R1-G Silicon N-Channel Power MOSFET

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Description

Silicon N-Channel Power MOSFET CS2N70 A3R1-G ○R General .
VDSS 700 V CS2N70 A3R1-G, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W wh.

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Datasheet Specifications

Part number
CS2N70A3R1-G
Manufacturer
Huajing Microelectronics
File Size
188.63 KB
Datasheet
CS2N70A3R1-G-HuajingDiscreteDevices.pdf
Description
Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ,Tstg TL Parameter Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC =

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