Datasheet Details
Part number:
CS2N70A6
Manufacturer:
Huajing Microelectronics
File Size:
234.93 KB
Description:
Silicon n-channel power mosfet.
CS2N70A6-HuajingMicroelectronics.pdf
Datasheet Details
Part number:
CS2N70A6
Manufacturer:
Huajing Microelectronics
File Size:
234.93 KB
Description:
Silicon n-channel power mosfet.
CS2N70A6, Silicon N-Channel Power MOSFET
VDSS 700 V CS2N70 A6, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 4.7 Ω performance and enhance the avalanche energy.
The transistor can be used in various
CS2N70A6 Features
* l Fast Switching l Low ON Resistance(Rdson≤6.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:3.8pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol VDS
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