CS2N70A6

Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS2N70A6 Features

* l Fast Switching l Low ON Resistance(Rdson≤6.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:3.8pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDS

CS2N70A6 General Description

VDSS 700 V CS2N70 A6, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 4.7 Ω performance and enhance the avalanche energy. The transistor can be used in various.

CS2N70A6 Datasheet (234.93 KB)

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CS2N70A6

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Huajing Microelectronics

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234.93 KB

Description:

Silicon n-channel power mosfet.

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CS2N70A6 Silicon N-Channel Power MOSFET Huajing Microelectronics

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CS2N70A6 Features

CS2N70A6 General Description

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