Datasheet4U Logo Datasheet4U.com

CS2N60A4H

Silicon N-Channel Power MOSFET

CS2N60A4H Features

* l Fast Switching l Low ON Resistance(Rdson≤4.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:5.4pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol VDS

CS2N60A4H General Description

VDSS 600 V CS2N60 A4H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 3.6 Ω performance and enhance the avalanche energy. The transistor can be used in variou.

CS2N60A4H Datasheet (355.09 KB)

Preview of CS2N60A4H PDF

Datasheet Details

Part number:

CS2N60A4H

Manufacturer:

Huajing Microelectronics

File Size:

355.09 KB

Description:

Silicon n-channel power mosfet.

📁 Related Datasheet

CS2N60A4HY Silicon N-Channel Power MOSFET (CR Micro)

CS2N60A4R Silicon N-Channel Power MOSFET (CR Micro)

CS2N60A4RZ-G Silicon N-Channel Power MOSFET (CR Micro)

CS2N60A4RZ-G Silicon N-Channel Power MOSFET (CR Micro)

CS2N60A4T Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS2N60A23H Silicon N-Channel Power MOSFET (CR Micro)

CS2N60A3H Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS2N60A7H Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS2N60 N-CHANNEL MOSFET (LZG)

CS2N60 VDMOS Transistor (ETC)

TAGS

CS2N60A4H Silicon N-Channel Power MOSFET Huajing Microelectronics

Image Gallery

CS2N60A4H Datasheet Preview Page 2 CS2N60A4H Datasheet Preview Page 3

CS2N60A4H Distributor