CS2N60A4H - Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS2N60A4H Datasheet Preview — Preview of CS2N60A4H PDF

Datasheet Details

Part number	CS2N60A4H
Manufacturer	Huajing Microelectronics
File Size	355.09 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS2N60A4H-HuajingMicroelectronics.pdf

CS2N60A4H Product details

Description

VDSS 600 V CS2N60 A4H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 3.6 Ω performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-252, which accords with the RoHS standard..

Features

l Fast Switching l Low ON Resistance(Rdson≤4.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:5.4pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |