CS2N60B23HP

Silicon N-Channel Power MOSFET

CR Micro

CS2N60B23HP Features

* l Fast Switching l Low ON Resistance(Rdson≤8Ω) l Low Gate Charge (Typical Data: 9.4nC) l Low Reverse transfer capacitances(Typical:16.2 pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（ TA= 25℃ unless otherwise specified）： Symbol

CS2N60B23HP General Description

VDSS 600 V CS2N60 B23HP, the silicon N-channel Enhanced ID 1.5 A VDMOSFETs, is obtained by the self-aligned planar PD (TA=25℃) 4.5 W Technology which reduce the conduction loss, improve RDS(ON)Typ 7 Ω switching performance and enhance the avalanche energy. The transistor can be used.

CS2N60B23HP Datasheet (882.06 KB)