CS2N65A3 Silicon N-Channel Power MOSFET

Huajing Microelectronics

Description

Silicon N-Channel Power MOSFET CS2N65 A3 ○R General .
VDSS 650 V CS2N65 A3, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which.

📥 Download Datasheet

CS2N65A3 Datasheet Preview — Preview of CS2N65A3 PDF

Datasheet Specifications

Part number: CS2N65A3
Manufacturer: Huajing Microelectronics
File Size: 235.21 KB
Datasheet: CS2N65A3-HuajingMicroelectronics.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified） Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulse

CS2N65A3 Distributors

📁 Related Datasheet

CS2N65A3R CS2N65A3R-G CS2N65A3RD CS2N65A4R CS2N65A8 CS2N65FA9R

📌 All Tags

CS2N65A3 Silicon N-Channel Power MOSFET Huajing Microelectronics

Huajing Microelectronics CS2N65A3-like datasheet