CS2N65FA9HY - Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS2N65FA9HY Datasheet Preview — Preview of CS2N65FA9HY PDF

Datasheet Details

Part number	CS2N65FA9HY
Manufacturer	Huajing Microelectronics
File Size	732.93 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS2N65FA9HY-HuajingMicroelectronics.pdf

CS2N65FA9HY Product details

Description

CS2N65F A9HY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 650 2.0 27 4 performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤5.0Ω) l Low Gate Charge (Typical Data:9nC) l Low Reverse transfer capacitances(Typical:6pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |