CS2N65FA9HY Datasheet - Huajing Microelectronics

CS2N65FA9HY Silicon N-Channel Power MOSFET

CS2N65F A9HY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 650 2.0 27 4 performance and enhance the avalanche energy. The transistor can be used in various power swi.

CS2N65FA9HY Features

* l Fast Switching l Low ON Resistance(Rdson≤5.0Ω) l Low Gate Charge (Typical Data:9nC) l Low Reverse transfer capacitances(Typical:6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter

CS2N65FA9HY-HuajingMicroelectronics.pdf