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CS2N65A3HY

Silicon N-Channel Power MOSFET

CS2N65A3HY Features

* l Fast Switching l Low ON Resistance(Rdson≤5Ω) l Low Gate Charge (Typical Data:9nC) l Low Reverse transfer capacitances(Typical:6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDSS ID I

CS2N65A3HY General Description

VDSS 650 V CS2N65 A3HY, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 3.9 Ω performance and enhance the avalanche energy. The transistor can be used in vario.

CS2N65A3HY Datasheet (241.85 KB)

Preview of CS2N65A3HY PDF

Datasheet Details

Part number:

CS2N65A3HY

Manufacturer:

Huajing Microelectronics

File Size:

241.85 KB

Description:

Silicon n-channel power mosfet.

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CS2N65A3HY Silicon N-Channel Power MOSFET Huajing Microelectronics

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