* Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 600 V ID(Tc=25℃) 2.0 A ID(Tc=100℃) 1.3 A IDM 6.0 A VGSS ±30 V EAS 120 mJ EAR 5.4 mJ IAR 2.0 A PD(Tc=25℃) 54 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃)
CS2N60
LZG
153.30 KB
N-channel mosfet.
BR2N60(CS2N60)
N-CHANNEL MOSFET/N MOS
: DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters
and switch .
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