* Low gate charge ,low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS ID(Tc=25℃) ID(Tc=100℃) IDM VGSS EAS EAR IAR PD(Tc=25℃) TJ,TSTG 600 2.0 1.3 6.0 ±30 120 5.4 2.0 23 -55 to 150 V A A A V mJ mJ A W ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Condition
CS2N60F
LZG
330.94 KB
N-channel mosfet.
BRF2N60(CS2N60F)
: DC/DC 。
N-CHANNEL MOSFET/N MOS
Purpose: These devices are well suited for high efficiency switching DC/DC converters and switc.
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