CS2N60A4RZ-G Datasheet - CR Micro

CS2N60A4RZ-G Silicon N-Channel Power MOSFET

CS2N60 A4RZ-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization.

CS2N60A4RZ-G Features

* Fast Switching

* Low ON Resistance(Rdson≤4.5Ω)

* Low Gate Charge (Typical Data: 9.5nC)

* Low Reverse transfer capacitances(Typical:3pF)

* 100% Single Pulse avalanche energy Test

* Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（TJ= 2

CS2N60A4RZ-G-HuajingMicroelectronics.pdf