CS2N60A7H Datasheet, Mosfet, Huajing Microelectronics

CS2N60A7H Features

• Mosfet l Fast Switching l Low ON Resistance(Rdson≤4.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:5.4pF) l 100% Single Pulse avalanche energy Test A

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CS2N60A7H

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Huajing Microelectronics

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📄 Datasheet

Description:

Silicon n-channel power mosfet. VDSS 600 V CS2N60 A7H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC

CS2N60A7H Application

• Applications Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a

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CS2N60A7H

Huajing Microelectronics

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